Abstract
We investigated the visible emission property of Pb(Zr,Ti)O3 (PZT) thin films irradiated with gammy-ray (γ-ray) irradiated at various total doses up to 1000 kGy. The PZT thin films were prepared on Pt/Ti/SiO2/Si substrates by using a sol-gel method with a spin-coating process. The visible emission was found to emerge near 550 nm upon γ-ray irradiation, and the intensity of the emission increased with increasing dose. The spectrum of the γ-ray-induced emission was quite narrow, which was quite different from that due to normal defects such as oxygen vacancies. We suggest that the γ-ray irradiation generates inside the PZT films a specific type of defect state that can be detected by using low-temperature photoluminescence spectroscopy.
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