Abstract
An optical emission spectrum was obtained from a Cl2 ECR plasma during GaAs etching in the RIBE system. Most emissive species were identified as atomic chlorines rather than molecular chlorines, typically when the ECR plasma was excited at the 300 W microwave power and the 500 V ion extraction voltage. From the relationship between the monitored emission intensity and the sputter yield as a function of the Cl2 gas pressure, the neutral etching species which chemically assist the ion beam etching undergone here were found to be the chlorine neutral radicals rather than the molecular species.
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