Abstract
This paper describes optical emission spectroscopy between 260 – 800 nm for CICH 3/H 2 rf-plasma reactive ion etching of Al 0.3Ga 0.7As, GaAs and InP compound semiconductors. The optical emission species identified for GaAs and InP etching are: Ga, GaCl, In, InCl and diatomic P 2 (A 1II g -X 1Σ + u) and P 2 + (C 2II-X 2II) lines. Under the plasma condition used here and allowing for the stoichiometry of the etch species, it is found that the ratio of emission intensity is Σ(In/P) ≈ 1.4. Taken together with the disparity between In and P 2 vapour pressures, these results suggest that the initial rate of Indium desorption is a factor 1.4 greater than that of phosphorous, suggesting a near-surface P-enriched surface.
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