Abstract
A study of optical, electrical, and diffusion properties of Hf and Zr in silicon is presented. Photoluminescence spectra were observed in Hf-implanted silicon. Isotope substitution confirms that the observed signal is Hf related. Several deep-level defects were found for Hf in both the upper and lower half of silicon band gap, and their parameters were tabulated. Dominant defect in deep-level spectra was determined to be a donor. Diffusion study of Zr-implanted samples indicated that Zr tends to diffuse out to the surface. Outdiffusion and precipitation of Zr which was found to form platelets, as confirmed by transmission electron microscopy, does not allow the traditional diffusion models to be used; however, an estimate of Zr diffusivity was performed, yielding a value of 2.8×10 −15 cm 2/s at 1100 °C.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call