Abstract
We apply a model dielectric function (MDF), which was developed for modeling the optical constants of crystalline semiconductors, to investigate the optical response in amorphous (a-) semiconductors. The approach is justified by the fact that the short-range structural order is important to understand the optical properties of both crystalline and amorphous semiconductors. Since the critical points do not have any validity in amorphous materials, the band gaps used in the MDF are not a result of the Bragg gaps at the Brillouin-zone boundaries, but are thought to arise from the short-range order determined by the covalent bonding (chemical gap). Analyses are presented for a-GaAs, and important implications of these results are discussed.
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