Optical detection up to 2.5 Gbit/s with a standard high-speed self-aligned silicon bipolar transistor

Wojtek J Bock ,Wilhelm Prettl

doi:10.1049/el:19880550

Optical detection up to 2.5 Gbit/s with a standard high-speed self-aligned silicon bipolar transistor

Wojtek J Bock , Wilhelm Prettl

https://doi.org/10.1049/el:19880550

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Journal: Electronics Letters	Publication Date: Jun 23, 1988
Citations: 1

Affiliation: Siemens (Germany), University of Regensburg

#Self-aligned Bipolar Transistor #High-speed Bipolar Transistor #Self-aligned Transistor #High-speed Silicon #High-speed Transistor #Optical Fibre Communication #Sensitive Photodetectors #Standard Silicon #Base-collector #Optical Detection

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Recent progress in optical fibre communication has encouraged the development of fast and sensitive photodetectors. The photoresponse of the base-collector (BC) diode of a standard high-speed self-aligned silicon bipolar transistor was investigated, showing optical detection capabilities up to 2.5 Gbit/s.

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Optical detection up to 2.5 Gbit/s with a standard high-speed self-aligned silicon bipolar transistor