Abstract
Spectroscopic ellipsometry measurements were carried out on Tl2GaInS4 layered crystals for orientations of electric field vector, parallel (E//c∗) and perpendicular (E⊥c∗) to optical axis c∗. The measurements were performed in the 1.2–6.2eV spectral range at room temperature. The real and imaginary components of the pseudodielectric function, pseudorefractive index and pseudoextinction coefficient were calculated from the analysis of ellipsometric data. The energies of interband transitions (critical points) have been found from the least-square fitting of the second derivative spectra of the pseudodielectric function. The results indicated five each interband transition structures for E//c∗ and E⊥c∗ configurations. The obtained critical point energies were assigned tentatively to interband transitions using the available electronic energy band structure given in literature.
Published Version
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