Abstract
This paper describes a direct photoluminescent method of characterizing high quantum efficiency semiconductors in terms of an “effective absorption coefficient” which is a function of the absorption coefficient and of the diffusion length of excess minority carriers injected optically. The results obtained by this method indicate that the diffusion lengths in unintentionally doped (pure) and n and p-type GaAs can be in excess of 0.03 cm at room temperature, and that surface and bulk radiation processes in these materials can be separated.
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