Abstract
This paper presents the characteristics and optical properties of lead iodide (PbI2) grown by the chemical vapor transport method. X-ray diffraction, Raman spectra, and scanning electron microscope methods were used to characterize the crystal structure and surface morphology of PbI2 material. The temperature-dependent photoconductivity and reflection spectra are used to investigate the direct band gap energies of PbI2 in the temperature range from 20 to 300 K. The parameters that describe the temperature variation of the energies of direct band gap energies are determined. The optical response was also investigated by time-resolved photoresponse and frequency-dependent photo responsivity investigations. Possible mechanisms of the kinetic decay processes of carriers are also discussed.
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