Abstract
A study on structures consisting of one InAs monolayer in a GaAs matrix, grown on both (001) and (113)A GaAs substrates, is presented. The structures were grown simultaneously at low temperature by atomic layer molecular beam epitaxy, and were structurally characterized by the x-ray interference effect. Optical characterization was performed by means of piezoreflectance and photoreflectance. Observed InAs-related transitions can only be fitted by an envelope wave function model if a larger InAs segregation is assumed in the (113) sample than in the (001) sample, or, less plausible, the band offset is strongly direction dependent.
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