Abstract
We have investigated effects of a trimethylantimony (TMSb) flow to the interface between GaAs buffer layer and InGaAsN quantum-well layer on localization of carriers in InGaAsN/GaAs single quantum wells (SQWs) grown by metal organic vapor phase epitaxy from the viewpoint of photoluminescence (PL) properties. We also measured photoreflectance spectroscopy in order to determine the energy of the band-edge transition. The Stokes shift of the PL-peak energy under a weak excitation condition decreases from 20 meV in no TMSb flow to 15 meV in the TMSb flow of 5×10 −7 mol/min. The PL-decay time in the low-energy PL tail related to localized states is obviously shortened by the TMSb flow. The decay profiles detected at various energies can be explained by a stretched exponential form peculiar to disordered systems. The overall results of the PL characterization demonstrate that the carrier localization is reduced by the TMSb flow to the interface.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
