Abstract
Layered structures such as silicon on insulator (SOI), and Si 3N 4 on silicon have been synthesized by different ion beam techniques and investigated by infrared (IR) reflection and absorption. Auger electron spectroscopy (AES) and cross-sectional transmission electron microscopy (XTEM). Buried SiO 2, Si 3N 4 and SiO x N y layers in silicon have been formed by oxygen (200 keV 1.8 × 10 18 O +/cm 2) or nitrogen (190 keV, 1.8 × 10 18 N +/cm 2) implantation and by dual implantation of oxygen (200 keV, 1.8 × 10 18 O +/cm 2) and nitrogen (180 keV, 4 × 10 17 N +/cm 2) into silicon and annealing at different temperatures. Silicon nitride films with a stoichiometric ratio of Si 3N 4 have been synthesized by ion beam enhanced deposition (IBED). Infrared reflection spectra in the wavenumber range 1700–5000 cm −1 were measured for the SOI structures and Si 3N 4 films on silicon. Refractive index profiles of the SOI structures and Si 3N 4 films on silicon were obtained by computer simulation of the IR reflection interference spectra. In-depth composition profiles of the Si 3N 4 film on silicon have been correlated with its refractive index profiles using the Lorentz-Lorenz equation. The results of IR analysis are in agreement with AES and XTEM results.
Published Version
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