Abstract
The results from modeling, manufacture, and investigation of the integral reflection coefficient (RS) of single-layer composite antireflection coatings of Al2O3–SiO2 for silicon solar cells with integral reflection coefficient RS ≤ 10% are presented. It was shown that for Al2O3 concentrations of 52–84 wt.%, SiO2 concentrations of 16–48 wt.%, and thickness of 53–97 nm the smallest values of RS are 73–77% for Al2O3 and 27–23% for SiO2 with thickness of 69–75 nm. It was shown experimentally that for layers with Al2O3:SiO2 = 75:25 wt.% with thickness of 72 nm RS = 3.53%, which is approximately half of the RS value for Si3N4.
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