Abstract
Neodymium-doped lanthanum fluoride (Nd3+:LaF3) thin films were successfully grown on MgF2(001) substrates by pulsed laser deposition. Photoluminescence spectra revealed a dominant peak at 173 nm with a decay time of 7.8 ns, which is similar to the results obtained from a bulk Nd3+:LaF3 crystal. Improvements in crystalline quality and vacuum ultraviolet (VUV) luminescence quantum efficiency were achieved by substrate heating, with optimum results being obtained at 400 °C. These results would open up possibilities in the development of a light-emitting device operating in the VUV region.
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