Abstract
Neodymium-doped lutetium fluoride (Nd3+:LuF3) thin films were successfully grown on MgF2 (001) substrates by pulsed laser deposition (PLD). It is void of cracks that are otherwise prevalent due to structural phase transitions in Nd3+:LuF3 during thin film deposition and bulk crystal growth. Cathodoluminescence (CL) spectra revealed multiple emission peaks, with a dominant peak in the vacuum ultraviolet (VUV) region at 179nm. This peak has a decay time of 6.7ns. The ability to grow high quality Nd3+-doped fluoride thin films would enable fabrication of VUV light-emitting devices that will enhance applications requiring efficient VUV light sources.
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