Abstract
We investigate thermally induced optical bistability (OB) in semiconductors using a cw-Argon-ion-laser beam pulsed by an electro-optic modulator. We obtain different types of OB due to absorptive and refractive changes with switching times in the order of ms. The different processes are modeled using a simple rate equation for the lattice temperature. Good agreement between theoretical predictions and the measurements are clearly to be seen.
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