Abstract
The first demonstrated optical bistability (OB) in a semiconductor was conducted by Gibbs et al.1 in GaAs at low temperature in which the OB is primarily dispersive and the nonlinear index arises from light-induced changes in excitonic absorption. Subsequently, and almost coincident with the first GaAs experiment1 was the work of Miller, Smith and Johnston2 who observed OB in InSb at 5°K due to a direct bandgap resonance mechanism. Quite recently, Gibbs et al. have observed excitonic OB at room temperature in a GaAs-GaAlAs superlattice etalon3.
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