Abstract
The optical band gap in 40 nm Ga1−xInxN/GaN single heterostructures is investigated in the composition range 0<x<0.2 by photoreflection spectroscopy (PR) at room temperature and compared with photoluminescence (PL) data. Clear PR oscillations at the GaInN band gap are observed as originating in the large piezoelectric field. Effective band gap bowing parameters b are derived for pseudomorphically stressed GaInN on GaN: b=2.6 eV (PR) and b=3.2 eV (PL in localized states). Using experimental deformation potentials of GaN, b=3.8 eV is extrapolated for the optical band gap in relaxed GaInN material. Previously reported smaller values are discussed.
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