Abstract
The molecular beam epitaxy-grown epitaxial, partially relaxed, GaAsBi x bismide layers of thickness and x ≈ 0.04 composition are examined. The atomic-structure analysis by x-ray diffraction and transmission electron microscopy shows the bismides to be CuPt-type atomic-ordered in both and subvariants. The ordering induces an optical anisotropy, which manifests at normal incidence light-beam propagation. The anisotropy is revealed by various optical spectroscopy techniques—polarized photoluminescence, photo-modulated transmittance and reflectance, polarized transmittance, and spectroscopic ellipsometry. The ordering-induced valence band splitting, determined from modulation spectroscopy measurements, is of about . The splitting is comparable to that in CuPt-ordered conventional III–V semiconductor alloys even though the maximal ordering parameter in investigated bismides is one order of magnitude lower.
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