Abstract
In-plane optical anisotropy was calculated for InGaAs strained quantum wells (QWs) with finite barrier potential on high-index (11n)-oriented GaAs substrates. The mixing effects of the spin–orbit split-off (SO) band were included by using 6 ×6 Hamiltonian based on the Luttinger–Kohn model. Calculated results reveal that optical anisotropy of the narrow QW is strongly dependent on barrier potential height, because the SO band mixing is enhanced by the strong confinement. Substrate off-angle dependence of photoluminescence intensity anisotropy observed in the (11n)A (n = 3, 4, and 5) In0.08Ga0.92As/GaAs strained QWs is well explained by the calculated curve with taking into account of the SO band mixing.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
