Abstract
In this paper, we report on a detailed investigation of the effect of misorientated InP(001) substrates on the optical properties of InAs quantum islands grown by molecular beam epitaxy in the Stranski–Krastanow regime. Temperature-dependent photoluminescence and polarization of photoluminescence (PPL) are studied. PPL shows a high degree of linear polarization, near 40%, for the sample grown on the substrate with 2° off miscut angle towards [110] direction (2°F) and only 16% for the sample grown on the substrate with 2° off miscut angle towards [010] direction (2°B). This result pointing out the growth of InAs quantum wires (QWr) on 2°F substrate and of quasi-isotropic InAs quantum dots (QD) on 2°B substrate. The luminescence remains strong at 300K as much as 36% of that at 8K, indicating a strong spatial localization of the carriers in the InAs QIs grown on InP(001).
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