Abstract
We study the optical anisotropy and optical gain of (311) GaAs quantum-wire structures at room temperature. Quantum wires are directly formed during the growth of GaAs/AlAs multilayer structures by Molecular Beam Epitaxy due to the natural evolution of nanometer-scale corrugations on (311)-oriented GaAs and AlAs surfaces. The optical anisotropy evaluated in photoluminescence excitation spectroscopy reaches a value as high as 30% for the heavy-hole exciton resonance in 43A GaAs quantum-wire structures. The luminescence intensity of (311) GaAs quantum-wire structures is generally higher than that of conventional (100) GaAs quantum wells. In the regime of unsaturated optical gain, the amplified luminescence intensity of the quantum wires exceeds that of the reference quantum wells by fourfold.
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