Optical and transport properties of a double heterojunction GaAs/AlGaAs injection laser from the shift of the wavelength and the threshold current in a strong magnetic field

Abstract

Measurements of the shift of the laser emission energy and the threshold current of a GaAs/AlGaAs double heterostructure injection laser with a p-type active layer in DC magnetic fields up to 25 T were carried out at temperatures T=20.3K and T=46.0K. A slight difference ( approximately=7%) in the threshold current was observed between measurements with the magnetic field parallel and perpendicular to the direction of the injection current. A theoretical model containing a density of states function with a magnetic field dependent low energy cut-off and lineshape for the Landau levels was used to analyse the observed behaviour of both the shift of the laser emission energy and the threshold current. From the analysis values of optical and transport parameters such as the mobility mu and the radiative recombination coefficient Br in the active layer and the cavity loss L are obtained.