Abstract
Yb-doped ZnO optical waveguide thin films were deposited on sapphire substrates by radiofrequency (RF) magnetron sputtering technology, and then Er+ions with the energy of 200 KeV were implanted into the as-deposited films, the implantation dose was 1×1015ions/cm2. Optical waveguide properties and film thicknesses were studied by prism coupling method. Film thicknesses, element components and Er+ions range distrbution were studied by Rutherford backscattering (RBS) technique. The basic structure and phase of the films were studied using X-ray diffraction (XRD). The properties of optical frequency upconwersion were investigated by fluorescence spectrometer. The results demonstrated that the Yb-doped ZnO films with Er-implantation have planar waveguide structure and the waveguide properties were changed compared with the virgin ZnO films. The effective refractive indices of the films decreasing with the amount of Yb-doped concentration increasing. Yb concentration in films associated with targets but more than that in them. The films shown the classic structure of c-axis preferred orientation. The compounds of Yb:Zn and Er:Zn were appeared in the films. Inspired the films by 980 nm laser in room temperature, stimulated optical emission between 300~720 nm was not observed.
Published Version
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