Abstract
We report on the optical and structural properties of strained InAlAs/InAsxP1−x heterostructures grown by solid source molecular beam epitaxy. The incorporation of As4 into strained InAsP has been studied using x-ray diffraction and photoluminscence measurements. We find that the incorporation of As decreases as x in the InAsxP1−x increases due, presumably, to increased strain. In addition, we have examined the effect of interface growth conditions and barrier material on the quantum well properties. The 4.2 K photoluminescence spectra of InAlAs/InAsP multi-quantum wells grown with different As and P flux switching conditions at the interfaces were compared with that of higher quality InP/InAsP multi-quantum wells. This comparison shows that the interface quality of InAlAs/InAsP multi-quantum wells is highly dependent on the switching conditions at the interfaces, especially the exposure time of InAsP surface to an As4 overpressure. This sensitivity is due to the As–P exchange reaction at the interfaces of InAlAs/InAsP.
Published Version
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