Optical and structural properties of SiO x films from ion-assisted deposition

Abstract

This study investigates the optical and structural properties of SiO x ( x ∼ 1) films prepared by an ion-assisted deposition (IAD) process. The films were prepared by evaporating silicon monoxide, with and without simultaneous Ar + bombardment. The stoichiometry of each film was determined as measured by the infrared spectrometry and X-ray photoelectron spectrometry. The variation in the stoichiometry revealed that the oxygen content of the SiO x thin films varied slightly under the different conditions of the Ar + bombardment. The results of the X-ray diffraction and transmission electron microscopy (TEM) measurements illustrated that all of the films had amorphous structures. However, a different interfacial appearance between the film and the substrate was observed from the TEM image. The optical constants of the SiO x thin films were determined by a spectroscopic ellipsometry. The extinction coefficient of all of the films approached zero in the infrared wavelength range from 2 to 7 μm, but the refractive index was varied by the IAD process. The variation of these refractive indices is mainly related to the packing density of the films.