Optical and structural properties of MOVPE-grown GaInSb/GaSb quantum wells

Abstract

This paper reports on the optical and structural properties of strained type-I Ga1−xInxSb quantum wells embedded in GaSb from a metal-organic vapour phase epitaxial growth perspective. Photoluminescence measurements and transmission electron microscopy were used to evaluate the effect of the growth temperature on the quality of Ga1−xInxSb strained layers with varied alloy compositions and thicknesses. Although the various factors contributing to the overall quality of the strained layers are difficult to separate, the quantum well characteristics are significantly altered by the growth temperature. Despite the high growth rates (∼2 nm/s), quantum wells grown at 607 °C display photoluminescence emissions with full-width at half-maximum of 3.5–5.0 meV for an indium solid content (x) up to 0.15.