Optical and Structural Properties of Metamorphic InGaAs/AlAsSb Quantum Wells Grown on GaAs Substrates

S Gozu,K Akahane,A Ueta,M Tsuchiya,N Ohtani,N Yamamoto

doi:10.1109/iciprm.2006.1634173

Optical and Structural Properties of Metamorphic InGaAs/AlAsSb Quantum Wells Grown on GaAs Substrates

S Gozu, K Akahane + Show 4 more

https://doi.org/10.1109/iciprm.2006.1634173

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Publication Date: Jun 5, 2006

Citations: 3

Affiliation: National Institute of Information and Communications Technology, Doshisha University

#Intersubband Transitions #Quantum Wells Grown + Show 8 more

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Abstract

Metamorphic InGaAs/AlAsSb multiple quantum wells (M-MQWs) were grown on GaAs. The M-MQWs were evaluated by X-ray diffraction, photoluminescence and polarity dependent optical absorption measurements. These measurements revealed that M-MQWs had good structural and optical qualities. M-MQWs with high sheet carrier densities (/spl ges/ 10/sup 12//cm/sup 2/) clearly showed absorptions in TM polarized light corresponding to intersubband transitions (ISBTs). Therefore, the M-MQWs can be applied to ultra fast optical modulators using the ISBTs.

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