Abstract
A new alloy GaN x P 1− x with different nitrogen content ( 0.67 % < x N < 2.3 % ) dedicated for LED fabrication was studied by optical absorption, photocurrent and electro-luminescence measurements as well as structural parameters employing SEM and SIMS. By increasing the nitrogen level up to 3% the nature of the fundamental band gap changes from an indirect-gap transition in GaP to the quasi-direct transition in GaN x P 1− x alloy therefore the electroluminescence emission is shifted from green to the orange–red range of the visible spectrum. Strong compositional dependence on band gap was confirmed from optical measurements. Measurement of photoluminescence intensity indicates an optimal nitrogen content in GaN x P 1− x alloy around 1.35%. This nitrogen content also exhibits smooth surface morphology, lower appearance of dislocation pits and better homogeneity of nitrogen incorporation revealed by SEM and cathodoluminescence images.
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