Abstract
Zinc oxide (ZnO) is a direct, wide band gap semiconductor material having many promising properties for UV/blue optoelectronics, transparent electronics, spintronic devices and sensor applications. The ZnO is synthesized by the technique of Chemical Bath Deposition by microwaves heating (MW-CBD). The urea concentration in the solution is varied, maintaining constant the zinc nitrate in ratio 1:1 … 1:10. The physical properties of ZnO thin films were examined by X-ray diffraction (XRD), SEM-EDS, and Raman scattering, which are convenient tools that can provide us with plenty of information about crystal structure and elementary excitons. By X-rays one obtains that it has hexagonal polycrystalline wurtzite type structure. The IR absorption line at 3577 cm-1 detected at 300 K in bath chemical ZnO is assigned an O–H bond primarily aligned with the c-axis of the crystal and bonding between Zn-O (473cm-1, 532 cm-1). The Raman spectra show the first order experimental Raman spectra of ZnO excited by 514.5 nm laser line. The first order Raman modes A1T, E1T, E2(H), A1Land E1L are identified as the peaks sited at 385, 426, 437, 572 and 584 cm-1
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