Abstract
We report on a detailed study of the structural and optical properties of nonstoichiometric nitrogen-rich InN grown on sapphire substrates, by migration enhanced afterglow deposition. The samples were polycrystalline, with the presence of InN dots. Unusually strong photoluminescence emission was measured at cryogenic temperatures, with the peak energy at ∼0.68 eV. Detailed analysis further shows that the sample has very low residual electron density in the range of ∼1016 cm−3 at temperatures below 20 K.
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