Abstract
Typical multi quantum well (MQW) grown on nonpolar a-plane GaN templates shows many pits composed of several semipolar planes, and these pits emit at different wavelengths due to the variation of indium incorporations into the QW. In this study, a surface-recovery GaN layer and high-temperature grown barrier were introduced to improve the a-plane MQW quality. We succeeded in decreasing the pits prior to the MQW growth and improving the interfaces of MQW. The structural and optical properties of the MQW were significantly improved.
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