Abstract

Thin Cu x S layers are obtained by partial or complete dipping of doped sprayed CdS films. The CdS doping studies were made with the following impurities: copper, indium copper + indium, with different concentrations. The effects of the doping on the structural and optical properties of Cu x S layers are presented here. It is shown, that, unlike indium, copper above a few ppm induces degradation of almost all chemical and optical characteristics of the Cu x S layer by introducing serious damages on crystallinity of the CdS layer. By introducing indium with copper, the former tends to moderate this drastic effect and to bring the optical and structural properties of couple doped films to acceptable levels.

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