Optical and solid state characterizaion of chemically deposited CuO/PbS double layer thin film

Abstract

Optical and solid state characteristics of novel CuO/PbS double layer thin films were studied. Rutherford backscattering (RBS) technique deciphered the thicknesses of the films as 650 nm, 471 nm and 482 nm for as-deposited, annealed at 473 K and 673 K respectively. The XRD analysis depicts increase in grain size and peak intensity as temperature increases. The results of optical characterization show that thermal annealing has profound effects on all the optical and solid state parameters investigated. The absorbance increased with increase in temperature exhibiting maximum for the film annealed at 673 K. The transmittance of the film samples showed a decreasing trend with increase in temperature exhibiting minimum for the film annealed at 673 K. The absorption coefficient increases from 0.001 × 106 m−1 to 0.006 × 106 m−1 for as-deposited, 0.0025 × 106 m−1 to 0.0175 × 106 m−1 for the annealed at 473 K and 0.003 × 106 m−1 to 0.020 × 106 m−1 for the annealed at 673 K. The extinction coefficient increased with increased in temperature exhibiting a maximum for the film annealed at 673 K. The refractive index, real and imaginary dielectric constant do not have a trend with increase in annealing temperature. Increase in annealing temperature lowers the band gap from 4.13 eV for the as-deposited to 4.05 eV and 3.90 eV for the annealed at 473 K and 673 K respectively. The wide- bandgap materials permits devices to operate at much higher voltages, frequencies and temperatures than convection semiconductor materials. Thus, this film could be used for high power applications, light-emitting diodes, transducers and window layers for solar cell fabrication.