Abstract
In this study, thin Al2O3, SnO2 and TiO2 films (37–58nm) were deposited by means of a recently developed pulse gas injection magnetron sputtering method. The deposition rates are in the range from 1.7nm/min (for Al2O3) to 24.4nm/min (for SnO2). Atomic force microscopy measurements show that the thus prepared layers are very smooth. The results obtained using scanning electron microscopy and Raman spectroscopy techniques revealed their amorphous-like nature. Optical properties of the dielectrics were examined by means of spectroscopic ellipsometry and show the red-shift of their band-gap energy and lower values of the refractive index compared to corresponding values determined for dense films and/or bulk materials.The microstructural and optical properties of examined oxides are directly associated with specific growth conditions (the impulse injection of the reactive gas) in the pulse gas injection magnetron sputtering process carried out in the low pressure oxygen plasma.
Published Version
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