Abstract
Synthesis and characterization of SnO2 thin films with various types of doping materials such as aluminum, fluorine and indium have been successfully carried out. This study aims to determine the effect of various types of doping materials on the quality of thin films such as the energy band gap produced. The results showed that the higher the doping concentration, the more transparent the layer formed. In addition, the optical properties of thin films such as band gap energy are affected by the applied doping. The direct and indirect values of the largest band gap energy for the percentage of 95:5% are 3.62 eV and 3.92 eV are found in the SnO2: In thin layer. Meanwhile, the lowest direct and indirect values of band gap energy are in the thin layer of SnO2:(Al+F+In) for a percentage of 85:15%, namely 3.41 eV and 3.55 eV. The greater the amount of doping given, the smaller the bandgap energy produced. In addition, the more combinations of doping mixtures (aluminum, fluorine, and indium) given, the smaller the bandgap energy produced. This shows that the quality of a thin film of SnO2 produced is influenced by the amount of concentration and the type of doping used
Highlights
The industrial revolution 4.0 is being hotly discussed lately
The direct and indirect values of the largest band gap energy for the percentage of 95:5% are 3.62 eV and 3.92 eV are found in the SnO2: In thin layer
The more combinations of doping mixtures given, the smaller the bandgap energy produced. This shows that the quality of a thin film of SnO2 produced is influenced by the amount of concentration and the type of doping used
Summary
The reason is, the industry can change drastically only with technology With technology such as artificial intelligence, automatic machines, and the internet that can be applied in everyday life, it can change the way individuals, companies, and governments operate, sparking the industrial revolution 4.0. The development of this technology is certainly inseparable from the role of scientists in finding semiconductor materials (Doyan, et al, 2020). SnO2 is widely applied to gas sensors (Rebholz, et al, 2015), optoelectronic equipment (Ikraman, et al, 2017), solar cells (Bittau, et al, 2017), capacitors (Doyan, et al, 2017), liquid crystal displays (Andrade, et al, 2019), diode (Gullu, et al, 2020), and transistor (Liu, et al, 2020)
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