Optical and electrical study of cap layer effect in QHE devices with double-2DEG

Abstract

ABSTRACTIn this work we report on the characteristics of GaAs/AlGaAs heterostructures with a symmetric double two-dimensional electron gas (D-2DEG). Optical characterization was made by room temperature photoreflectance (PR) spectroscopy as well as electrical properties were determinated using the quantum Hall effect measurements at 2K. In order to study the surface effects on the conduction band profile, three samples with different GaAs cap layer thickness (25, 60 and 80 nm) were grown by the molecular beam epitaxy. Photoreflectance spectra at room temperature show the wide-period Franz-Keldysh oscillations between 1.42 and 1.70 eV originated by the surface electric field. The analysis of these oscillations shows that the surface electric field varies from 503 to 120 kV/cm whereas the thickness of the cap layer increases that was produced by the reduction of the depletion zone near the surface. Using QHE measurements we found that electron density increases if the surface electric field decreases.