Abstract
We present a simple way to prepare low-resistance ZnO nanorods by hydrothermal self-assembled growth at 95°C and in situ doped with Al. The NRs were grown on graphene/Ni/Si and annealed at 400°C. Few layer graphene was used to assist aligned growth of the NRs and acted as an electrode during electric measurement. The measurement showed resistance of the Al-doped ZnO NRs 100 times lower than that of undoped ZnO NRs. Photoluminescence measurement showed enhanced deep level emission for the Al-doped NRs and low temperature photoluminescence study showed coexistence of acceptor bound-exciton (3.353eV) and donor bound-exciton (3.362eV).
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