Abstract
Highly resistive GaN : Be was obtained by means of synthesis of Ga+Be with atomic nitrogen under high nitrogen pressure. Activation energy of resistivity is about 1.5 eV. This material exhibits features very different from those observed in highly resistive bulk GaN : Mg. Up to 300 K strong yellow band dominates photoluminescence spectrum in resistive GaN : Be crystals. Positron annihilation studies point to the presence of gallium vacancies, V Ga. In highly resistive GaN:Mg neither yellow band with considerable intensity, nor detectable concentration of V Ga was found. We also discuss the puzzling findings in highly resistive bulk GaN : Be of morphological features typical for highly conducting bulk n-GaN material.
Published Version
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