Optical and electrical characteristics of ZnS/Au/ZnO multilayer with variable Au thicknesses as transparent conductive films via pulsed laser depositon

Abstract

Transparent and conducting ZnS/Au/ZnO multilayer films were fabricated on quartz glass via pulsed laser depositon at room temperature. The thickness of Au interlayer changed from 2 to 10 nm. The photoelectric properties which are dependent on the Au thickness were studied in detail. For ZnS/Au/ZnO films, three diffraction peaks in the XRD pattern are identified as the (111) plane of β-ZnS film, the (002) plane of ZnO film and the (111) plane of Au interlayer, which indicate the good crystal quality and preferential orientation growth of the films. The FOM of ZnS/Au/ZnO films with 8 nm Au interlayer is higher than that of other ZnS/Au/ZnO films fabricated in this study, and the highest average transmittance in the visible light region is 85.9%. From these results, it is concluded that the photoelectric performance of ZnS/Au/ZnO films with 8 nm Au interlayer is the best, and the films can be used as transparent electrodes.