Abstract
We report on new InGaP/AlGaAs/GaAs composite emitter heterojunction bipolar and phototransistors (CEHBTs/CEHPTs) with a low turn-on voltage. The composite emitter comprised of the digital graded superlattice emitter and the InGaP sub-emitter is used to smooth out potential spike associated with the emitter–base heterojunction and to obtain a low emitter–base turn-on voltage. A fabricated CEHBT exhibits a small offset voltage of 55 mV and a low turn-on voltage of 0.83 V with a dc current gain as high as 150. In case of a CEHPT’s collector–emitter characteristics with base floating, optical gains increase with increasing input optical power. Furthermore, the collector current saturation voltage is small due to a low turn-on voltage. We obtain an optical gain larger than 6.83 with a collector current saturation voltage smaller than 0.5 V. On the other hand, performance results of a CEHPT with two- and three-terminal configuration were investigated and compared.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
