Abstract
We have demonstrated an optical amplification of hot electron light emitting and lasing in semiconductor heterostructure (HELLISH) vertical-cavity semiconductor optical amplifiers (VCSOAs) at wavelength operation of \({\lambda=1.29\,{\rm \mu}{\rm m}}\). These devices were characterized using optical pumping, electrical pumping and optical–electrical pumping. HELLISH–VCSOA device of 500-μm contact separation is a surface emitter based on longitudinal injection of electron and hole pairs in their respective channels. Dilute nitride Ga0.35In0.65N0.02As0.08/GaAs is used as an active material for operation in the \({\lambda=1.3-{\rm \mu}{\rm m}}\) window of the optical communications. The device has undoped distributed Bragg reflectors (DBRs), and the current is injected longitudinally into the active layers without passing through DBRs. The issues are associated with refractive index contrast, and current injections through the DBR layers are avoided.
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