Abstract
An anthracene film has been deposited on an n-type silicon to fabricate an Au/anthracene/n-Si junction device. The band gap of the anthracene film has been determined from the optical measurement as Eg=1.65eV. After the fabrication of the Au/anthracene/n-Si junction device, temperature dependent capacitance–voltage characteristics in the range of 160–300K were studied to obtain the junction parameters of the device. The diffusion potential, barrier height, Fermi energy level and donor concentration parameters have been determined from the linear 1/C2–V curves with reverse bias at all temperatures. Both Fermi energy level and the barrier height increased with the increasing temperature. Temperature-dependence of the barrier height has been attributed to inhomogeneous barrier, traps and interface states. The ionized donor concentrations have varied with the temperature in an unsystematic manner due to the trapping/de-trapping of the charges at various temperatures.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Physica E: Low-dimensional Systems and Nanostructures
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
