Schottky Diode Applications of the Fast Green FCF Organic Material and the Analyze of Solar Cell Characteristics

Abstract

In this study, a device applications of organic material Fast Green FCF (C37H34N2Na2O10S3Na2) has been investigated. After chemical cleaning process of boron doped H-Si crystals, Al metal was coated on the one surface of crystals by thermal evaporation and fast green organic materials were coated on other surface of crystals with spin coating method (coating parameters; 800 rpm for 60 s). Finally, Ni metal was coated on Fast Green by sputtering and we obtained the Ni/Fast Green FCF/n-Si/Al Schottky type diode. And then we calculated the basic diode parameters of device with current-voltage (I-V) and capacitance- voltage (C-V) measurements at the room temperature. We calculated the ideality factory (n), barrier height (Φb) of rectifing contact from I-V measurements using thermionic emission methods. Furthermore, we calculated ideality factory (n), barrier height (Φb) and series resistance (Rs) of device using Cheung and Norde functions too. The diffusion potential, barrier height, Fermi energy level and donor concentration have been determined from the linear 1/C2-V curves at reverse bias, at room temperature and various frequencies. Besides we measured the current-voltage (I-V) at under light and analyzed the characteristics of the solar cell device.