Abstract
Three amorphous silicon oxycarbonitrides are prepared by thermal decomposition of a polymeric precursor at different temperatures. The optical absorption spectra of these materials are measured over a wide range of excitation energies from 0.4 to 5.0 eV. The spectra are analyzed using theoretical models. Two absorption transitions are identified between the deep defect energy level and the delocalized conduction band and between the two delocalized bands. It is found that the band gaps measured decrease with increasing pyrolysis temperature. The results obtained are discussed.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
