Abstract
The optical absorption edge of CuInSe2 and CuInS2 single crystals was measured as a function of hydrostatic pressure up to 10 GPa. In both cases the direct energy gap increases linearly with pressure at the rate of 30 and 24 meV GPa−1 for CuInSe2 and CuInS2 , respectively. From changes in the light-transmission characteristic of the samples under pressure, a structural first-order irreversible transition was observed at 7.1 GPa for CuInSe2 and 9.6 GPa for CuInS2 . Also, a new metastable semiconducting phase was formed in pressure-quenched CuInS2 samples.
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