Operations of hydrogenated diamond metal–oxide–semiconductor field-effect transistors after annealing at 500 °C

Abstract

Operations for hydrogenated diamond (H-diamond) metal–oxide–semiconductor field-effect transistors (MOSFETs) after annealing at 500 °C are investigated. SiOx films are employed as oxide insulators for the H-diamond MOSFETs. Before annealing, the current output maximum, on/off ratio, and subthreshold swing for the SiOx/H-diamond MOSFET are −53.3 mA mm−1, 1.4 × 109, and 88 mV dec−1, respectively. After annealing at 500 °C for as long as 60 min, although leakage current density of the SiOx/H-diamond MOS capacitor increases, good operations and distinct pinch-off characteristics are observed for the SiOx/H-diamond MOSFET with the above electrical properties of −2.6 mA mm−1, 1.4 × 104, and 530 mV dec−1, respectively. Stable electrical characteristics are confirmed for the annealed SiOx/H-diamond MOSFET after 35 cycles repeat measurements. This study is meaningful to the development of H-diamond MOSFETs for high-temperature applications.