Abstract
This article reports on the results of the detailed study of erosion of Al target in magnetron discharge plasma. It was demonstrated that the combination of middle-frequency (MF) and high impulse power (HiPIMS) power supply results in the significant increase of deposition rates of Al films by changing of sputtering yield. The MF pulse assists HiPIMS discharge to transit in a high power mode.
Highlights
High-current pulsed magnetron sputtering (HiPIMS) is an perspective and effective tool for thin-film deposition [1, 2]
It is shown that the presputtering of Al target by MF power in front of a high-current pulse leads to a decrease operation voltage and an increase in the average discharge current
Preliminary ionization by MF power supply can promote a faster output of the magnetron diode to the high-power mode [4]
Summary
High-current pulsed magnetron sputtering (HiPIMS) is an perspective and effective tool for thin-film deposition [1, 2]. 1. Introduction High-current pulsed magnetron sputtering (HiPIMS) is an perspective and effective tool for thin-film deposition [1, 2]. It is the effect of electrical discharge parameters, the influence of sputtering mode (by gas ions or target ions), the decrease of atom flux to the substrate due to their ionization and etc. The paper is devoted to search operation parameters of magnetron diode with HiPIMS power supply to increase deposition rate.
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