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Abstract
The formation of thin capacitor dielectrics for Megabit DRAM's has to be accomplished on structured silicon substrates. Single layer thermal oxides do not meet the requirements of a high breakdown field and sufficient long time stability. We report on the technology of oxide-nitride-oxide (ONO) triple layers on silicon which have proved to be reliable dielectrics for DRAM applications. We discuss the formation of the bottom and the top oxide as well as the intermediate Si 3N 4 layer. Scaling of the ONO thickness is a problem because of anomalous oxidation occuring during top oxide formation. We present methods for further scaling by using CVD processes partially or fully for the oxide layers. In addition, scaling with high-ϵ dielectrics substituting the nitride layer is discussed. Finally we address the problem of thickness determination for ONO layers.
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