Abstract
We have developed a new instrumentation technique for Si crystal growth process of Czochralski (CZ) method for the purpose of the quality improvement. The online measurement technique for the melt surface level of Si crystal in growth furnace using image of the fusion ring, which appears to surround solid liquid boundary of Si ingot, was developed. Our new technique can measure the melt surface level with high accuracy without the following influences, (i) the change of solid liquid boundary height during diameter change, and (ii) the habit lines of Si ingot. The accuracy of this method is confirmed within +/-0.6mm. This technique contributes to the improvement of CZ Si crystal quality.
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